ZXMN4A06GTA
- Manufacturer's Part No.:ZXMN4A06GTA
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N-CH 40V 5A SOT223
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 2367
- Available: 20000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.04346 | US $1.04 |
10+ | US $0.69564 | US $6.96 |
30+ | US $0.52173 | US $15.65 |
100+ | US $0.41738 | US $41.74 |
500+ | US $0.38260 | US $191.30 |
1000+ | US $0.34782 | US $347.82 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerDiodes Incorporated
- Manufacturer's Part No.ZXMN4A06GTA
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- Time@Peak Reflow Temperature-Max (s)40
- Package / CaseTO-261-4, TO-261AA
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time17 Weeks
- MountSurface Mount
- Number of Pins4
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Power
- Number of Terminations4
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Pin Count4
- Number of Elements1
- Lead FreeLead Free
- Radiation HardeningNo
- Published2002
- Pbfree Codeno
- Current Rating6.7A
- Voltage - Rated DC40V
- Case ConnectionDRAIN
- Height1.8mm
- Length6.7mm
- Width3.7mm
- Weight7.994566mg
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Power Dissipation2W
- Max Junction Temperature (Tj)150°C
- Number of Channels1
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2W Ta
- Turn On Delay Time2.55 ns
- Turn-Off Delay Time28.61 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)5A
- Pulsed Drain Current-Max (IDM)22A
- Continuous Drain Current (ID)7A
- Resistance75mOhm
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage40V
- Threshold Voltage1V
- FET TypeN-Channel
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds770pF @ 40V
- Gate Charge (Qg) (Max) @ Vgs18.2nC @ 10V
- Vgs (Max)±20V
- Rise Time4.45ns
- Fall Time (Typ)7.35 ns
- Current - Continuous Drain (Id) @ 25°C5A Ta
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Rds On (Max) @ Id, Vgs50m Ω @ 4.5A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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