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ZXMN4A06GTA

  • In Stock: 2367
  • Available: 20000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.04346US $1.04
10+US $0.69564US $6.96
30+US $0.52173US $15.65
100+US $0.41738US $41.74
500+US $0.38260US $191.30
1000+US $0.34782US $347.82

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Product Parameter

  • Manufacturer
    Diodes Incorporated
  • Manufacturer's Part No.
    ZXMN4A06GTA
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Package / Case
    TO-261-4, TO-261AA
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Number of Pins
    4
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    FET General Purpose Power
  • Number of Terminations
    4
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Pin Count
    4
  • Number of Elements
    1
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2002
  • Pbfree Code
    no
  • Current Rating
    6.7A
  • Voltage - Rated DC
    40V
  • Case Connection
    DRAIN
  • Height
    1.8mm
  • Length
    6.7mm
  • Width
    3.7mm
  • Weight
    7.994566mg
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Power Dissipation
    2W
  • Max Junction Temperature (Tj)
    150°C
  • Number of Channels
    1
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    2W Ta
  • Turn On Delay Time
    2.55 ns
  • Turn-Off Delay Time
    28.61 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    5A
  • Pulsed Drain Current-Max (IDM)
    22A
  • Continuous Drain Current (ID)
    7A
  • Resistance
    75mOhm
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    40V
  • Threshold Voltage
    1V
  • FET Type
    N-Channel
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    770pF @ 40V
  • Gate Charge (Qg) (Max) @ Vgs
    18.2nC @ 10V
  • Vgs (Max)
    ±20V
  • Rise Time
    4.45ns
  • Fall Time (Typ)
    7.35 ns
  • Current - Continuous Drain (Id) @ 25°C
    5A Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 4.5A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

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