ANHI

In December 2019, we received an investment of 180 million yuan from the government of Jinan City. Overseas Laboratory: San Jose, California, United States. Main business: Design, production, process development, sales, and technical services of power device products and modules. We have successfully mass-produced the first commercially available IGBT single-tube product in China at Shandong Keda. Power devices: MOSFET/ Super Junction MOSFET/ IGBT/ SiC MOSFET. We hold key patents for trench SiC MOSFET power chips. We have independent intellectual property rights in process device technology and product technology. We serve the domestic new energy, power system drive, and energy conversion industries. We provide solutions from discrete devices to module-level solutions. We aim to build the first domestic company focused on high-efficiency third-generation power semiconductors, becoming the world's most advanced company in high-voltage and ultra-high-voltage power devices.