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74LVC1G175DBVRE4

  • Available: 6000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.27900US $0.28
10+US $0.18600US $1.86
30+US $0.13950US $4.19
100+US $0.11160US $11.16
500+US $0.10230US $51.15
1000+US $0.09300US $93.00

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  • Description
  • Alternatives
  • Shopping Guide
Description
General description
The 74LVC1G175 is a high-performance, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.
The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using Ioff.
The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
Features
• Wide supply voltage range from 1.65 V to 5.5 V
• 5 V tolerant inputs for interfacing with 5 V logic
• High noise immunity
• Complies with JEDEC standard: ◆ JESD8-7 (1.65 V to 1.95 V) ◆ JESD8-5 (2.3 V to 2.7 V) ◆ JESD8B/JESD36 (2.7 V to 3.6 V).
• ±24 mA output drive (VCC = 3.0 V)
• ESD protection: ◆ HBM EIA/JESD22-A114-B exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V.
• CMOS low power consumption
• Latch-up performance exceeds 250 mA
• Direct interface with TTL levels
• Inputs accept voltages up to 5 V
• Multiple package options
• Specified from −40 °C to +85 °C and −40 °C to +125 °C.
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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