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AP3015KTR-G1

  • In Stock: 46500
  • Available: 298313

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.23562US $0.24
10+US $0.15708US $1.57
30+US $0.11781US $3.53
100+US $0.09425US $9.43
500+US $0.08639US $43.20
1000+US $0.07854US $78.54

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  • Description
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Description

The AP3015KTR-G1 is a high-performance, low-side N-channel MOSFET manufactured by Diodes Incorporated. This component is designed for a variety of applications, including power management, load switching, and DC-DC converters, making it a versatile choice for engineers and designers in the electronics field.

Key Features:

  1. N-Channel MOSFET: The AP3015KTR-G1 utilizes an N-channel configuration, which is known for its high efficiency and fast switching capabilities. This makes it suitable for applications requiring rapid on/off control.

  2. Voltage Rating: The device typically has a maximum drain-source voltage (V_DS) rating of around 30V, allowing it to handle a wide range of voltage applications without risk of breakdown.

  3. Current Rating: It can handle continuous drain currents (I_D) of up to 15A, depending on the thermal conditions and PCB layout, making it capable of driving significant loads.

  4. R_DS(on): The on-resistance (R_DS(on)) is low, often in the range of a few milliohms, which minimizes power loss during operation and enhances overall efficiency. This is particularly important in battery-powered applications where energy conservation is critical.

  5. Package Type: The AP3015KTR-G1 is typically housed in a compact SOT-23 package, which is ideal for space-constrained designs. The small footprint allows for easy integration into various circuit layouts.

  6. Thermal Performance: The device is designed to provide good thermal performance, with a maximum junction temperature (T_J) rating of up to 150°C. This allows it to operate reliably in demanding environments.

  7. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, enabling the MOSFET to turn on with lower gate drive voltages, which is beneficial for interfacing with microcontrollers and other low-voltage logic devices.

  8. Fast Switching Speed: The AP3015KTR-G1 features fast switching characteristics, which are essential for high-frequency applications, reducing switching losses and improving overall efficiency.

Applications:

  • Power Management: Ideal for use in power supply circuits, where efficient switching is crucial.
  • Load Switching: Suitable for controlling loads in various electronic devices, from consumer electronics to industrial applications.
  • DC-DC Converters: Can be used in buck, boost, or buck-boost converter designs, enhancing the efficiency of power conversion processes.

Conclusion:

The AP3015KTR-G1 from Diodes Incorporated is a robust and efficient N-channel MOSFET that offers a combination of high current handling, low on-resistance, and compact packaging. Its versatility makes it an excellent choice for a wide range of electronic applications, particularly where space and efficiency are paramount.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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