AT45DB161E-CCUF-T

Description
The Atmel AT45DB161E is a 2.3V or 2.5V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications.
The AT45DB161E also supports RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161E also contains two SRAM buffers of 512/528 bytes each.
The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pademory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.
Features  Single 2.3V - 3.6V or 2.5V - 3.6V supply  Serial Peripheral Interface (SPI) compatible  Supports SPI modes 0 and 3  Supports Atmel® RapidS™ operation  Continuous Read capability through entire array  Up to 85MHz  Low-power Read option up to 10MHz  Clock-to-output time (tV) of 6ns maximum  User configurable page size  512 bytes per page  528 bytes per page (default)  Page size can be factory pre-configured for 512 bytes  Two fully independent SRAM data buffers (512/528 bytes)  Allows receiving data while reprogramming the Main Memory Array  Flexible programming options  Byte/Page program (1 to 512/528 bytes) directly into main memory  Buffer Write  Buffer to Main Memory Page Program  Flexible Erase options  Page Erase (512/528 bytes)  Block Erase (4KB)  Sector Erase (128KB)  Chip Erase (16-Mbits)  Program and Erase Suspend/Resume  Advanced hardware and software data protection features  Individual sector protection  Individual sector lockdown to make any sector permanently read-only  128-byte, One-Time Programmable (OTP) Security Register  64 bytes factory programmed with a unique identifier  64 bytes user programmable  Software controlled reset  JEDEC Standard Manufacturer and Device ID Read  Low-power dissipation  500nA Ultra-Deep Power-Down current (typical)  3μA Deep Power-Down current (typical)  25μA Standby current (typical)  11mA Active Read current (typical)  Endurance: 100,000 program/erase cycles per page minimum  Data retention: 20 years  Complies with full industrial temperature range  Green (Pb/Halide-free/RoHS compliant) packaging options  8-lead SOIC (0.150" wide)  8-pad Ultra-thin DFN (5 x 6 x 0.6mm)  9-ball Chip-scale BGA (5 x 5 x 1.2mm)