AT45DB321E-SHF-T

Description
The Adesto® AT45DB321E is a 2.3V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications.
The AT45DB321E also supports the RapidS serial interface for applications requiring very high speed operation. Its 34,603,008 bits of memory are organized as 8,192 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB321E also contains two SRAM buffers of 512/528 bytes each.
Features Single 2.3V - 3.6V supplySerial Peripheral Interface (SPI) compatible-Supports SPI modes 0 and 3-Supports RapidS™ operationContinuous read capability through entire array-Up to 85MHz-ow-power read option up to 15MHz-Clock-to-output time (tV) of 6ns maximumUser configurable page size-512 bytes per page-528 bytes per page (default)-Page size can be factory pre-configured for 512 bytesTwo fully independent SRAM data buffers (512/528 bytes)Flexible programming options-Byte/Page Program (1 to 512/528 bytes) directly into main memory-Buffer Write-Buffer to Main Memory Page ProgramFlexible erase options-Page Erase (512/528 bytes)-Block Erase (4KB)-Sector Erase (64KB)-Chip Erase (32-Mbits)Program and Erase Suspend/ResumeAdvanced hardware and software data protection features-Individual sector protection-Individual sector lockdown to make any sector permanently read-only128-byte, One-Time Programmable (OTP) Security Register-64 bytes factory programmed with a unique identifier-64 bytes user programmableHardware and software controlled reset optionsJEDEC Standard Manufacturer and Device ID ReadLow-power dissipation-400nA Ultra-Deep Power-Down current (typical)-3µA Deep Power-Down current (typical)-25µA Standby current (typical)-7mA Active Read current (typical)Endurance: 100,000 program/erase cycles per page minimumData retention: 20 yearsGreen (Pb/Halide-free/RoHS compliant) packaging options-8-lead SOIC (0.208" wide)-8-pad Ultra-thin DFN (5 x 6 x 0.6mm)-9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)-Die in Wafer Form