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CSD95378BQ5MC

  • In Stock: 45098
  • Available: 38848

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $13.58000US $13.58
10+US $12.22200US $122.22
30+US $9.50600US $285.18
100+US $7.80850US $780.85
500+US $7.46900US $3734.50
1000+US $6.79000US $6790.00

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Description

The CSD95378BQ5MC is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for applications requiring efficient power management, such as in DC-DC converters, power supplies, and motor control systems.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The CSD95378BQ5MC is housed in a compact, thermally efficient QFN (Quad Flat No-lead) package, which allows for better heat dissipation and a smaller footprint on the PCB.
  3. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
  4. Current Rating: The device can handle continuous drain currents of up to 60A, depending on the thermal conditions and PCB layout, which makes it capable of driving high loads efficiently.
  5. R_DS(on): The on-resistance (R_DS(on)) is very low, often in the range of a few milliohms, which minimizes conduction losses and improves overall efficiency in power applications.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic levels, which is beneficial for interfacing with microcontrollers and digital logic circuits.
  7. Thermal Performance: The QFN package design enhances thermal performance, allowing for better heat dissipation and enabling the device to operate at higher power levels without overheating.

Applications:

  • DC-DC Converters: Ideal for synchronous rectification in buck converters, where efficiency is critical.
  • Power Management: Used in power supplies for computers, servers, and other electronic devices to manage power distribution effectively.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.

Electrical Characteristics:

  • Gate Charge (Q_g): The total gate charge is low, which helps in reducing switching losses and improving the efficiency of high-frequency applications.
  • Switching Speed: The device is designed for fast switching, making it suitable for high-frequency applications where rapid turn-on and turn-off are required.

Conclusion:

The CSD95378BQ5MC from Texas Instruments is a versatile and efficient power MOSFET that excels in various applications requiring reliable power management. Its low on-resistance, high current handling capability, and compact package make it an excellent choice for engineers looking to optimize performance in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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