CSD95481RWJ
- Manufacturer's Part No.:CSD95481RWJ
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- Series:NexFET™
- Description:POWERSTAGE
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- In Stock: 16600
- Available: 2500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.47944 | US $4.48 |
10+ | US $4.03150 | US $40.32 |
30+ | US $3.13561 | US $94.07 |
100+ | US $2.57568 | US $257.57 |
500+ | US $2.46369 | US $1231.85 |
1000+ | US $2.23972 | US $2239.72 |
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- Description
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The CSD95481RWJ is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments, a well-known company in the semiconductor industry. This particular component is designed for applications requiring efficient power management, such as in power supplies, motor drivers, and other high-current switching applications.
Key Features:
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Type and Configuration: The CSD95481RWJ is a N-channel MOSFET, which means it uses electrons as the charge carriers. This type of MOSFET is typically favored for its high efficiency and fast switching capabilities.
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Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications. The continuous drain current (I_D) rating is significant, allowing it to handle substantial loads without overheating.
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R_DS(on) Specification: One of the standout features of the CSD95481RWJ is its low on-resistance (R_DS(on)), which minimizes power loss during operation. This characteristic is crucial for enhancing the overall efficiency of power conversion systems.
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Thermal Performance: The device is designed with thermal management in mind, featuring a robust package that aids in heat dissipation. This is essential for maintaining performance and reliability in high-power applications.
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Package Type: The CSD95481RWJ is typically housed in a compact, surface-mount package, which facilitates easy integration into modern circuit designs. The package is designed to optimize space on printed circuit boards (PCBs) while ensuring effective thermal performance.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is within a range that allows for easy interfacing with standard logic levels, making it versatile for various control circuits.
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Applications: This MOSFET is ideal for use in synchronous rectification, DC-DC converters, and other applications where efficient switching is critical. Its performance characteristics make it suitable for both consumer electronics and industrial applications.
Summary:
The CSD95481RWJ from Texas Instruments is a highly efficient N-channel MOSFET designed for a variety of power management applications. With its low on-resistance, robust thermal performance, and compact packaging, it is an excellent choice for engineers looking to optimize their designs for efficiency and reliability. Whether used in power supplies, motor control, or other high-current applications, this MOSFET stands out as a reliable component in modern electronic systems.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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