CSD95490Q5MCT
- Manufacturer's Part No.:CSD95490Q5MCT
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- Series:NexFET™
- Description:CSD95490Q5MCT
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- In Stock: 700
- Available: 43750
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $9.15752 | US $9.16 |
10+ | US $8.24177 | US $82.42 |
30+ | US $6.41026 | US $192.31 |
100+ | US $5.26557 | US $526.56 |
500+ | US $5.03664 | US $2518.32 |
1000+ | US $4.57876 | US $4578.76 |
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The CSD95490Q5MCT is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This device is designed for applications requiring efficient power management, such as DC-DC converters, power supplies, and motor control systems.
Key Features:
- Type: N-channel MOSFET
- Package: The CSD95490Q5MCT comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
- Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 40V, making it suitable for a variety of low to medium voltage applications.
- Current Rating: The device can handle continuous drain currents (I_D) of up to 90A, depending on the thermal conditions and PCB layout, which makes it capable of driving high loads.
- R_DS(on): The on-resistance (R_DS(on)) is very low, often in the range of a few milliohms, which minimizes conduction losses and improves overall efficiency in power applications.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically low, allowing for easy drive with standard logic-level signals.
- Thermal Performance: The QFN package design enhances thermal dissipation, allowing the MOSFET to operate efficiently at higher power levels without overheating.
Applications:
- DC-DC Converters: Ideal for synchronous rectification in buck converters, where efficiency is critical.
- Power Management: Used in power supply circuits for computers, servers, and other electronic devices.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
Electrical Characteristics:
- Input Capacitance (C_iss): The input capacitance is designed to be low, which helps in achieving fast switching speeds.
- Output Capacitance (C_oss): The output capacitance is also optimized to reduce switching losses during operation.
- Reverse Recovery: The device features fast switching characteristics, which are beneficial in reducing losses during the turn-on and turn-off phases.
Conclusion:
The CSD95490Q5MCT from Texas Instruments is a robust and efficient power MOSFET that is well-suited for a variety of high-performance applications. Its combination of low on-resistance, high current handling capability, and compact packaging makes it an excellent choice for engineers looking to optimize power efficiency in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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