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CSD97395Q4MT

  • In Stock: 72000
  • Available: 59949

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.98875US $2.99
10+US $1.99250US $19.93
30+US $1.49438US $44.83
100+US $1.19550US $119.55
500+US $1.09588US $547.94
1000+US $0.99625US $996.25

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Description

The CSD97395Q4MT is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.

Key Features:

  1. Package Type: The CSD97395Q4MT comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs). The QFN package typically has a low profile and provides excellent electrical performance.

  2. Voltage Rating: This MOSFET is rated for a maximum drain-source voltage (V_DS) of around 40V, making it suitable for various applications that operate within this voltage range.

  3. Current Rating: The device can handle a continuous drain current (I_D) of up to 95A, which is significant for high-power applications. This capability allows it to manage substantial loads without overheating.

  4. R_DS(on): One of the standout features of the CSD97395Q4MT is its low on-resistance (R_DS(on)), typically around 4.5 mΩ. This low resistance minimizes power loss during operation, enhancing overall efficiency and thermal performance.

  5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic levels. This feature is crucial for ensuring that the MOSFET can be turned on and off quickly, which is essential for high-frequency applications.

  6. Switching Speed: The CSD97395Q4MT exhibits fast switching characteristics, making it ideal for applications that require rapid transitions between on and off states. This speed helps reduce switching losses and improves overall system efficiency.

  7. Thermal Performance: The QFN package design aids in heat dissipation, allowing the MOSFET to operate at higher power levels without thermal throttling. This is particularly important in applications where heat management is critical.

  8. Applications: Typical applications for the CSD97395Q4MT include synchronous rectification in power supplies, DC-DC converters, battery management systems, and electric vehicle powertrains. Its robust specifications make it suitable for both consumer electronics and industrial applications.

Conclusion:

The CSD97395Q4MT from Texas Instruments is a versatile and efficient power MOSFET that combines high current handling, low on-resistance, and fast switching capabilities. Its compact QFN package and excellent thermal performance make it an ideal choice for modern power management solutions across various industries.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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