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CSD97396Q4M

  • In Stock: 240000
  • Available: 94123

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $44.66200US $44.66
10+US $33.49650US $334.97
30+US $29.03030US $870.91
100+US $25.68065US $2568.07
500+US $24.11748US $12058.74
1000+US $22.33100US $22331.00

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Description

The CSD97396Q4M is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for applications requiring efficient power management, such as in DC-DC converters, power supplies, and motor control systems.

Key Features:

  1. Package Type: The CSD97396Q4M comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs). The QFN package typically features a low profile and a small footprint, making it suitable for modern electronic designs.

  2. Voltage Rating: This MOSFET is rated for a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications. Its voltage rating ensures reliable operation in various power management scenarios.

  3. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, which allows it to manage significant power loads effectively. This high current rating is essential for applications that require robust performance under heavy loads.

  4. R_DS(on): One of the standout features of the CSD97396Q4M is its low on-resistance (R_DS(on)), typically around 4.5 mΩ. This low resistance minimizes power losses during operation, enhancing overall efficiency and thermal performance.

  5. Switching Performance: The MOSFET is designed for fast switching speeds, which is crucial for applications like synchronous rectification in power converters. Its fast turn-on and turn-off characteristics help reduce switching losses and improve the efficiency of power conversion.

  6. Thermal Performance: The QFN package design aids in effective heat dissipation, allowing the device to operate at higher power levels without overheating. This is particularly important in high-efficiency applications where thermal management is critical.

  7. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, which allows for easy interfacing with low-voltage control signals, making it versatile for various control schemes.

Applications:

The CSD97396Q4M is ideal for a range of applications, including:

  • DC-DC Converters: Used in step-down (buck) converters for efficient voltage regulation.
  • Power Management: Suitable for power distribution in consumer electronics, automotive systems, and industrial applications.
  • Motor Control: Effective in driving motors in robotics and automation systems.

Conclusion:

Overall, the CSD97396Q4M from Texas Instruments is a highly efficient, low-resistance power MOSFET that excels in demanding power management applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize performance in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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