CSD97396Q4M
- Manufacturer's Part No.:CSD97396Q4M
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- Series:NexFET™
- Description:IC NEXFET SYNC BUCK 8VSON
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- In Stock: 240000
- Available: 94123
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $44.66200 | US $44.66 |
10+ | US $33.49650 | US $334.97 |
30+ | US $29.03030 | US $870.91 |
100+ | US $25.68065 | US $2568.07 |
500+ | US $24.11748 | US $12058.74 |
1000+ | US $22.33100 | US $22331.00 |
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The CSD97396Q4M is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for applications requiring efficient power management, such as in DC-DC converters, power supplies, and motor control systems.
Key Features:
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Package Type: The CSD97396Q4M comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs). The QFN package typically features a low profile and a small footprint, making it suitable for modern electronic designs.
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Voltage Rating: This MOSFET is rated for a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications. Its voltage rating ensures reliable operation in various power management scenarios.
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Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, which allows it to manage significant power loads effectively. This high current rating is essential for applications that require robust performance under heavy loads.
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R_DS(on): One of the standout features of the CSD97396Q4M is its low on-resistance (R_DS(on)), typically around 4.5 mΩ. This low resistance minimizes power losses during operation, enhancing overall efficiency and thermal performance.
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Switching Performance: The MOSFET is designed for fast switching speeds, which is crucial for applications like synchronous rectification in power converters. Its fast turn-on and turn-off characteristics help reduce switching losses and improve the efficiency of power conversion.
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Thermal Performance: The QFN package design aids in effective heat dissipation, allowing the device to operate at higher power levels without overheating. This is particularly important in high-efficiency applications where thermal management is critical.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, which allows for easy interfacing with low-voltage control signals, making it versatile for various control schemes.
Applications:
The CSD97396Q4M is ideal for a range of applications, including:
- DC-DC Converters: Used in step-down (buck) converters for efficient voltage regulation.
- Power Management: Suitable for power distribution in consumer electronics, automotive systems, and industrial applications.
- Motor Control: Effective in driving motors in robotics and automation systems.
Conclusion:
Overall, the CSD97396Q4M from Texas Instruments is a highly efficient, low-resistance power MOSFET that excels in demanding power management applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize performance in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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