DS1211S+T&R

DS1211S+T&R Description 
The Maxim Integrated DS1211S+T&R is a non-volatile memory chip using a low-leakage CMOS process that provides accurate voltage sensing at very low battery consumption. As a memory, the DS1211S+T&R addresses CMOS RAM to non-volatile memory conversion applications, and it operates from a 100 nA supply voltage. DS1211S+T&R
Features 
• Converts full CMOS RAMs into nonvolatile memories
• Unconditionally write protects when VCC is out of tolerance
• Automatically switches to battery when power-fail occurs
• 3 to 8 decoder provides control for up to eight CMOS RAMs
• Consumes less than 100 nA of battery current
• Tests battery condition on power-up
• Provides for redundant batteries
• Power-fail signal can be used to interrupt processor on power failure
• Optional 5% or 10% power-fail detection
• Optional 20-pin SOIC surface mount package
• Optional industrial temperature range of -40°C to +85°C DS1211S+T&R Applications 
• Cell phone
• Computer
• Network Communication
• Home Appliances
• Automotive electronics