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DSD1792DBR

  • Available: 5

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $30.21984US $30.22
10+US $22.66488US $226.65
30+US $19.64290US $589.29
100+US $17.37641US $1737.64
500+US $16.31871US $8159.36
1000+US $15.10992US $15109.92

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  • Description
  • Alternatives
  • Shopping Guide
Description
AND APPLICATIONS
The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 200 mm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for high dynamic range.
FEATURES
♦ 21 dBm Output Power at 1-dB Compression at 18 GHz
♦ 12.5 dB Power Gain at 18 GHz
♦ 55% Power-Added Efficiency
♦ Source Vias to Backside Metallization
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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