FM25640B-GTR
- Manufacturer's Part No.:FM25640B-GTR
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- Series:F-RAM™
- Description:IC FRAM 64K SPI 20MHZ 8SOIC
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- Quantity:Buy NowAdd to Cart
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- In Stock: 20000
- Available: 26554
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.69950 | US $1.70 |
10+ | US $1.13300 | US $11.33 |
30+ | US $0.84975 | US $25.49 |
100+ | US $0.67980 | US $67.98 |
500+ | US $0.62315 | US $311.58 |
1000+ | US $0.56650 | US $566.50 |
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- Description
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- Shopping Guide
The FM25640B-GTR is a non-volatile memory device produced by Cypress Semiconductor, specifically designed for applications requiring reliable data storage with low power consumption. This device is part of the FM25 series of ferroelectric random access memory (FRAM) products, which utilize ferroelectric technology to provide fast read and write capabilities while maintaining data integrity over a wide range of environmental conditions.
Key Features:
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Memory Capacity: The FM25640B-GTR offers a storage capacity of 64 kilobits (Kb), which is equivalent to 8 kilobytes (KB) of data. This capacity is suitable for applications that require moderate amounts of data storage.
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Interface: The device communicates via a standard Serial Peripheral Interface (SPI), allowing for easy integration into various microcontroller and processor systems. The SPI interface supports high-speed data transfer, making it efficient for applications that require quick access to stored data.
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Data Retention: One of the standout features of the FM25640B-GTR is its exceptional data retention capability. It can retain data for over 100 years at room temperature, making it ideal for applications where long-term data storage is critical.
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Endurance: The FRAM technology used in this device allows for a high number of write cycles, typically around 10 trillion write cycles. This endurance far exceeds that of traditional EEPROM and Flash memory, making it suitable for applications that require frequent updates to stored data.
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Low Power Consumption: The FM25640B-GTR operates with low power requirements, which is particularly beneficial for battery-operated devices. It consumes minimal power during both read and write operations, contributing to overall energy efficiency.
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Operating Voltage: The device operates within a voltage range of 2.7V to 3.6V, making it compatible with a variety of power supply configurations commonly used in embedded systems.
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Temperature Range: The FM25640B-GTR is designed to function reliably across a wide temperature range, typically from -40°C to +85°C, ensuring performance in diverse environmental conditions.
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Package Type: The device is available in a compact 8-pin SOIC (Small Outline Integrated Circuit) package, which facilitates easy mounting on printed circuit boards (PCBs) and helps save space in electronic designs.
Applications:
The FM25640B-GTR is well-suited for a variety of applications, including:
- Industrial automation systems
- Smart meters
- Medical devices
- Consumer electronics
- Automotive applications
- Data logging and storage solutions
Summary:
In summary, the FM25640B-GTR from Cypress Semiconductor is a robust and efficient non-volatile memory solution that leverages FRAM technology to provide high endurance, low power consumption, and long data retention. Its SPI interface and wide operating conditions make it a versatile choice for a range of applications requiring reliable data storage.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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