FM25V10-GTR
- Manufacturer's Part No.:FM25V10-GTR
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- Series:F-RAM™
- Description:IC FRAM 1M SPI 40MHZ 8SOIC
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- Quantity:Buy NowAdd to Cart
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- In Stock: 10000
- Available: 10610
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.10694 | US $5.11 |
10+ | US $4.59624 | US $45.96 |
30+ | US $3.57486 | US $107.25 |
100+ | US $2.93649 | US $293.65 |
500+ | US $2.80881 | US $1404.41 |
1000+ | US $2.55347 | US $2553.47 |
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- Description
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- Shopping Guide
The FM25V10-GTR is a non-volatile memory device manufactured by Cypress Semiconductor, specifically designed for applications requiring reliable data storage with low power consumption. This device is part of the FM25V series, which utilizes ferroelectric technology to provide a unique combination of speed, endurance, and data retention.
Key Features:
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Memory Type: The FM25V10-GTR is a 1 Megabit (128K x 8) ferroelectric random access memory (FRAM) device. Unlike traditional flash memory, FRAM offers faster write speeds and virtually unlimited write endurance, making it ideal for applications that require frequent data updates.
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Non-Volatility: The device retains data even when power is removed, ensuring that critical information is preserved without the need for battery backup. This feature is particularly beneficial in applications where data integrity is paramount.
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Speed: The FM25V10-GTR boasts fast read and write access times, typically in the range of 40 ns for read operations and 100 ns for write operations. This speed allows for efficient data processing and quick response times in embedded systems.
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Low Power Consumption: The device operates at a low voltage, typically between 2.7V and 3.6V, and consumes minimal power during both active and standby modes. This characteristic makes it suitable for battery-operated devices and energy-sensitive applications.
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Endurance and Reliability: With a write endurance of over 10 trillion write cycles, the FM25V10-GTR significantly outperforms traditional EEPROM and flash memory in terms of durability. Additionally, it offers a data retention period of over 100 years, ensuring long-term reliability.
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Interface: The FM25V10-GTR uses a standard SPI (Serial Peripheral Interface) for communication, making it compatible with a wide range of microcontrollers and processors. The SPI interface allows for easy integration into existing systems.
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Package Options: The device is available in various package types, including SOIC (Small Outline Integrated Circuit) and TDFN (Thin Dual Flat No-lead), providing flexibility for different design requirements and space constraints.
Applications:
The FM25V10-GTR is well-suited for a variety of applications, including:
- Industrial Automation: For storing configuration settings, calibration data, and logs in control systems.
- Consumer Electronics: In devices like smart meters, wearables, and home automation systems where data integrity is crucial.
- Automotive: For applications requiring reliable data storage in harsh environments, such as in engine control units (ECUs) and infotainment systems.
- Medical Devices: In equipment that requires secure and reliable data storage for patient information and device settings.
Conclusion:
The FM25V10-GTR from Cypress Semiconductor is a versatile and robust memory solution that combines the benefits of non-volatility, high speed, low power consumption, and exceptional endurance. Its unique ferroelectric technology makes it an excellent choice for a wide range of applications where data integrity and reliability are essential.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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