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LP8860DQVFPRQ1

  • In Stock: 256675
  • Available: 52351

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $131.54400US $131.54
10+US $102.31200US $1023.12
30+US $87.69600US $2630.88
100+US $80.38800US $8038.80
500+US $77.46480US $38732.40
1000+US $73.08000US $73080.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • esd
  • as
  • iso14001
  • iso9001
  • D&B
  • Description
  • Alternatives
  • Shopping Guide
Description
AND APPLICATIONS
The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The LP1V500 also features Si3N4 passivation and is available in a flanged ceramic package (P100).
The LPV1500 features plated source thru-vias for improved performance.
FEATURES
• +31.5 dBm Typical Power at 18 GHz
• 8.5 dB Typical Power Gain at 18 GHz
• +27 dBm at 3.3V Battery Voltage
• +45 dBm Typical Intercept Point
• 50% Power-Added-Efficiency at 18 GHz
• Plated Source Thru-Vias
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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