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MT093AE1

  • Available: 8

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $9.58084US $9.58
10+US $8.62276US $86.23
30+US $6.70659US $201.20
100+US $5.50898US $550.90
500+US $5.26946US $2634.73
1000+US $4.79042US $4790.42

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Description
[Champion Microelectronic Corporation]GENERAL This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
♦ Robust High Voltage Termination
♦ Avalanche Energy Specified
♦ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
♦ Diode is Characterized for Use in Bridge Circuits
♦ IDSS Specified at Elevated Temperature
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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