MT29F1G08ABBEAH4-ITX:E

The MT29F1G08ABBEAH4-ITX:E is a NAND flash memory device manufactured by Micron Technology. This specific model is part of Micron's 1Gb (Gigabit) NAND flash family, designed for a variety of applications, including mobile devices, consumer electronics, and embedded systems.

Key Features:

1. Memory Type:

   • The MT29F1G08ABBEAH4-ITX:E is a NAND flash memory, which is a non-volatile storage technology that retains data even when power is removed.

2. Density:

   • It has a density of 1Gb, which translates to 128MB of usable storage capacity. This makes it suitable for applications requiring moderate storage space.

3. Architecture:

   • The device utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits of data per cell, which enhances storage density and reduces cost per bit.

4. Interface:

   • The memory chip typically features a parallel interface, which allows for high-speed data transfer rates. This is crucial for applications that require quick read and write operations.

5. Package Type:

   • The MT29F1G08ABBEAH4-ITX:E is available in a compact package, often in a TSOP (Thin Small Outline Package) form factor, which is ideal for space-constrained designs.

6. Operating Voltage:

   • The device operates at a standard voltage range, typically around 2.7V to 3.6V, making it compatible with a wide range of electronic systems.

7. Endurance and Reliability:

   • The NAND flash is designed for high endurance, with a specified number of program/erase cycles, ensuring reliability over time. This is particularly important for applications that involve frequent data updates.

8. Temperature Range:

   • The device is rated for operation over a wide temperature range, making it suitable for both consumer and industrial applications.

9. Data Retention:

   • The MT29F1G08ABBEAH4-ITX:E offers excellent data retention capabilities, ensuring that stored data remains intact for extended periods, even without power.

10. Applications:

    • This NAND flash memory is commonly used in smartphones, tablets, digital cameras, and other portable devices, as well as in embedded systems where reliable and efficient storage is required.

Summary:

The MT29F1G08ABBEAH4-ITX:E from Micron Technology is a versatile and reliable NAND flash memory solution, offering a balance of performance, density, and endurance. Its compact design and robust features make it an ideal choice for a wide range of electronic applications, ensuring that it meets the demands of modern technology while providing efficient data storage solutions.