MT47H32M16HR-25E:G
- Manufacturer's Part No.:MT47H32M16HR-25E:G
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- Description:IC DRAM 512M PARALLEL 84FBGA
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- In Stock: 4438
- Available: 11885
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.68000 | US $4.68 |
10+ | US $4.21200 | US $42.12 |
30+ | US $3.27600 | US $98.28 |
100+ | US $2.69100 | US $269.10 |
500+ | US $2.57400 | US $1287.00 |
1000+ | US $2.34000 | US $2340.00 |
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- Description
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The MT47H32M16HR-25E:G is a specific model of DRAM (Dynamic Random Access Memory) produced by Micron Technology, a leading manufacturer in the semiconductor industry. This memory chip is part of the DDR3 (Double Data Rate 3) SDRAM family, which is widely used in various computing applications, including desktops, laptops, and servers.
Key Features and Specifications:
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Memory Type: DDR3 SDRAM
- The MT47H32M16HR-25E:G operates at a higher speed compared to its predecessors, offering improved performance for data-intensive applications.
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Density: 512 Megabits (Mb)
- This chip contains 32 Megabytes (MB) of memory, organized as 16 bits wide, which allows for efficient data handling and storage.
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Configuration:
- The memory is organized in a 4-bank structure, with each bank capable of independent access, enhancing the overall throughput and efficiency of memory operations.
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Speed Grade:
- The “-25E” in the part number indicates a speed grade of 25 nanoseconds, which refers to the time it takes for the memory to respond to a read or write command. This speed is suitable for a variety of applications, balancing performance and power consumption.
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Voltage:
- The MT47H32M16HR-25E:G operates at a standard voltage of 1.5V, which is typical for DDR3 memory, allowing for lower power consumption compared to older DDR2 memory types.
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Package Type:
- This memory chip is typically available in a compact FBGA (Fine Ball Grid Array) package, which allows for efficient space utilization on circuit boards and is suitable for high-density applications.
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Temperature Range:
- The chip is designed to operate within a specified temperature range, making it suitable for various environments, including industrial applications.
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Applications:
- The MT47H32M16HR-25E:G is used in a wide range of applications, including consumer electronics, networking equipment, and embedded systems, where reliable and efficient memory performance is crucial.
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Features:
- It supports various advanced features such as burst mode, which allows for faster data transfer rates, and self-refresh mode, which helps in power saving during idle periods.
Summary:
The MT47H32M16HR-25E:G from Micron Technology is a versatile and efficient DDR3 SDRAM memory chip that provides a balance of performance, power efficiency, and reliability. Its specifications make it suitable for a wide range of applications, ensuring that it meets the demands of modern computing environments.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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