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PGA2320IDWR

  • In Stock: 1231
  • Available: 12

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $17.88750US $17.89
10+US $16.09875US $160.99
30+US $12.52125US $375.64
100+US $10.28531US $1028.53
500+US $9.83812US $4919.06
1000+US $8.94375US $8943.75

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Description
OverviewPanasonic’s GaN power transistors offer superior device performances enabling higher power conversion efficiency and higher power density of power electronic systems than those by conventional Si-based power devices.
Features– Crystal growth of GaN on 6-inch silicon substrate.– 600V enhancement mode power switch Normally-Off operation with single GaN device by Panasonic’s proprietary GIT: Gate Injection Transistor technology.– Extremely high-speed switching characteristics.– Current Collapse Free 600V and more.– Zero recovery loss characteristics.Applications– Power supply for AC-DC (PFC, Isolated DC-DC)– Battery charger system– Photovoltaic power converter, Motor inverter
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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