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S29AL016J70TFI020

  • In Stock: 8000
  • Available: 2001

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.64000US $2.64
10+US $2.37600US $23.76
30+US $1.84800US $55.44
100+US $1.51800US $151.80
500+US $1.45200US $726.00
1000+US $1.32000US $1320.00

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Description

The S29AL016J70TFI020 is a high-performance flash memory device manufactured by Cypress Semiconductor, specifically designed for a variety of applications requiring non-volatile storage. Here’s a detailed description of its key features and specifications:

General Overview

  • Type: NOR Flash Memory
  • Capacity: 16 Megabits (2 Megabytes)
  • Organization: The memory is organized as 2,048 blocks of 8 words each, with each word consisting of 16 bits.
  • Interface: The device utilizes a parallel interface, allowing for easy integration with microcontrollers and other digital systems.

Electrical Characteristics

  • Supply Voltage: The S29AL016J operates typically at a supply voltage of 2.7V to 3.6V, making it suitable for low-power applications.
  • Access Time: The device features a fast access time of 70 ns, enabling quick read operations.
  • Programming Voltage: The programming voltage is typically around 12V, which is standard for NOR flash devices.

Performance Features

  • Read Speed: The device supports high-speed read operations, making it ideal for applications that require rapid data retrieval.
  • Write/Erase Cycles: The S29AL016J supports a minimum of 100,000 program/erase cycles, ensuring durability and longevity in data retention.
  • Data Retention: The memory guarantees data retention for up to 20 years at 125°C, ensuring reliability in critical applications.

Package and Pin Configuration

  • Package Type: The S29AL016J70TFI020 is available in a 44-pin TSOP (Thin Small Outline Package) form factor, which is compact and suitable for space-constrained designs.
  • Pin Count: The device features a total of 44 pins, including address, data, and control pins, facilitating easy connection to host systems.

Additional Features

  • Sector Architecture: The memory is divided into sectors, allowing for flexible programming and erasing. This sector-based architecture enables partial updates to the memory without the need to erase the entire chip.
  • Security Features: The device includes security features such as a hardware write protection option, which helps prevent accidental data modification.
  • Compatibility: The S29AL016J is compatible with various industry-standard protocols, making it easy to integrate into existing systems.

Applications

The S29AL016J70TFI020 is suitable for a wide range of applications, including:

  • Embedded systems
  • Automotive electronics
  • Consumer electronics
  • Industrial control systems
  • Networking equipment

Conclusion

The S29AL016J70TFI020 from Cypress Semiconductor is a robust and reliable NOR flash memory solution, offering high performance, durability, and flexibility for various applications. Its combination of fast access times, high endurance, and low power consumption makes it an excellent choice for designers looking to implement non-volatile memory in their products.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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