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TC4W53FU,LF

  • In Stock: 755728
  • Available: 6000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.28800US $0.29
10+US $0.19200US $1.92
30+US $0.14400US $4.32
100+US $0.11520US $11.52
500+US $0.10560US $52.80
1000+US $0.09600US $96.00

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Description

The TC4W53FU,LF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. This component is designed for various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET

    • The N-channel configuration allows for efficient switching and is commonly used in high-speed applications.
  2. Voltage Rating:

    • The TC4W53FU,LF typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
  3. Current Rating:

    • It can handle a continuous drain current (I_D) of approximately 50A, which allows it to manage significant power loads without overheating.
  4. On-Resistance (R_DS(on)):

    • The on-resistance is low, often in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  5. Gate Threshold Voltage (V_GS(th)):

    • The gate threshold voltage is typically around 1-2V, allowing for easy drive with standard logic levels.
  6. Package Type:

    • The TC4W53FU,LF is usually housed in a compact surface-mount package, such as DPAK or similar, which facilitates efficient thermal management and space-saving on PCBs.
  7. Switching Speed:

    • This MOSFET is designed for fast switching applications, making it ideal for use in DC-DC converters, motor drivers, and other high-frequency circuits.
  8. Thermal Characteristics:

    • It has good thermal performance, with a maximum junction temperature rating that allows it to operate reliably in various environmental conditions.
  9. Applications:

    • Common applications include power supplies, battery management systems, automotive electronics, and industrial automation.

Additional Considerations:

  • Gate Drive Requirements:

    • The TC4W53FU,LF requires appropriate gate drive voltage to ensure it operates efficiently. Designers should consider the gate drive circuit to achieve optimal performance.
  • Protection Features:

    • While the device may not have built-in protection features, external components such as diodes and fuses are often recommended to safeguard against overvoltage and overcurrent conditions.
  • Environmental Compliance:

    • The "LF" in the part number indicates that the device is lead-free, complying with RoHS (Restriction of Hazardous Substances) standards, making it suitable for environmentally conscious designs.

In summary, the TC4W53FU,LF from Toshiba is a robust and efficient N-channel MOSFET that is well-suited for a variety of electronic applications, particularly where high current and low on-resistance are critical for performance.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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