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TMS470R1A384PGEQ

  • Available: 5667

Reference Price(In US Dollars)

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  • Description
  • Alternatives
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Description

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 5Ω@ VGS = 10V, ID =1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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