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TP3057AN

  • Available: 5325

Reference Price(In US Dollars)

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1+US $0.00000US $0.00

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Description
TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHMTMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50and 60 volt TMOS devices. Just as with our TMOSE–FET designs,TMOSV is designed to with stand high energy in the avalanche and commutation modes.New
Features of TMOS V
• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSSand VDS(on)Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

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