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TPS2812DR

  • In Stock: 187835
  • Available: 112458

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.00980US $1.01
10+US $0.67320US $6.73
30+US $0.50490US $15.15
100+US $0.40392US $40.39
500+US $0.37026US $185.13
1000+US $0.33660US $336.60

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  • Description
  • Alternatives
  • Shopping Guide
Description

The TPS2812DR is a high-speed, dual-channel gate driver from Texas Instruments, designed to drive N-channel MOSFETs and IGBTs in various applications, including motor drives, power supplies, and other high-frequency switching applications.

Key Features:

  1. Dual Channel: The TPS2812DR can drive two independent channels, making it suitable for half-bridge configurations and other applications requiring multiple gate drivers.

  2. High-Speed Operation: The device is capable of driving gates with fast rise and fall times, typically in the range of nanoseconds, which is essential for high-frequency switching applications. This helps in reducing switching losses and improving overall efficiency.

  3. Output Drive Capability: The driver can source and sink significant current (up to 2A), allowing it to quickly charge and discharge the gate capacitance of power MOSFETs and IGBTs, which is crucial for minimizing switching delays.

  4. Wide Supply Voltage Range: The TPS2812DR operates over a wide supply voltage range, typically from 10V to 20V, making it versatile for various power supply designs.

  5. Under-Voltage Lockout (UVLO): The device features an under-voltage lockout function that prevents operation when the supply voltage is below a certain threshold, ensuring reliable operation and protecting the power devices from insufficient gate drive voltage.

  6. Dead Time Control: The TPS2812DR includes provisions for dead time control, which helps prevent shoot-through conditions in half-bridge configurations by ensuring that both high-side and low-side switches are not turned on simultaneously.

  7. Thermal Protection: The driver is designed with thermal protection features to prevent overheating, enhancing reliability in demanding applications.

  8. Package: The TPS2812DR is available in a small, surface-mount package (typically a 8-pin SOIC), which is suitable for space-constrained designs and allows for efficient thermal management.

Applications:

  • Motor Drives: Ideal for driving the gates of MOSFETs in brushless DC (BLDC) motor controllers.
  • Power Converters: Used in DC-DC converters, inverters, and other power management systems.
  • Switching Power Supplies: Suitable for applications requiring fast switching and high efficiency.

Conclusion:

The TPS2812DR from Texas Instruments is a robust and efficient gate driver solution that provides high-speed performance and reliable operation for driving power MOSFETs and IGBTs in a variety of applications. Its features, such as dual-channel output, under-voltage lockout, and thermal protection, make it a versatile choice for engineers designing high-performance power electronics.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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