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IS45S16320B-7TLA1-TR

  • Available: 2443

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Description
OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
The 512Mb SDRAM is organized as follows.
FEATURES
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply Vdd Vddq IS42/45S16320B 3.3V 3.3V IS42S86400B 3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)
• Operating Temperature Range: Commercial: 0°C to +70°C Industrial: -40°C to +85°C Automotive, A1: -40°C to +85°C
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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