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MT29F4G08ABADAWP:D

  • In Stock: 200000
  • Available: 10000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.78334US $3.78
10+US $3.40501US $34.05
30+US $2.64834US $79.45
100+US $2.17542US $217.54
500+US $2.08084US $1040.42
1000+US $1.89167US $1891.67

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  • Description
  • Alternatives
  • Shopping Guide
Description

The MT29F4G08ABADAWP:D is a NAND flash memory device produced by Micron Technology, designed for high-density storage applications. This specific model is part of Micron's 3D NAND flash family, which utilizes advanced 3D stacking technology to increase storage capacity while maintaining performance and reliability.

Key Features:

  1. Memory Type:

    • The MT29F4G08ABADAWP:D is a NAND flash memory, specifically a multi-level cell (MLC) type, which allows it to store multiple bits of data per cell, enhancing storage density.
  2. Capacity:

    • This device has a storage capacity of 4 gigabits (Gb), which translates to 512 megabytes (MB) of usable storage space.
  3. Interface:

    • The device typically supports a Serial Peripheral Interface (SPI) or a parallel interface, allowing for easy integration into various electronic systems.
  4. Form Factor:

    • The MT29F4G08ABADAWP:D is available in a compact package, often in a BGA (Ball Grid Array) format, which is suitable for space-constrained applications.
  5. Performance:

    • The device is designed for high-speed data transfer, with read and write speeds optimized for both sequential and random access patterns. This makes it suitable for applications requiring quick data retrieval and storage.
  6. Endurance and Reliability:

    • Micron's NAND flash devices are engineered for durability, with a specified number of program/erase (P/E) cycles, ensuring long-term reliability in demanding environments.
  7. Power Consumption:

    • The MT29F4G08ABADAWP:D is designed to operate efficiently, with low power consumption during both active and idle states, making it ideal for battery-operated devices.
  8. Applications:

    • This NAND flash memory is commonly used in a variety of applications, including mobile devices, consumer electronics, automotive systems, and industrial applications, where reliable and high-capacity storage is essential.
  9. Data Integrity Features:

    • The device includes built-in error correction capabilities to enhance data integrity and reliability, ensuring that stored data remains accurate over time.
  10. Temperature Range:

    • The MT29F4G08ABADAWP:D is designed to operate within a specified temperature range, making it suitable for both consumer and industrial applications.

Summary:

The MT29F4G08ABADAWP:D from Micron Technology is a versatile and high-performance NAND flash memory solution, ideal for a wide range of applications requiring reliable and efficient data storage. Its combination of high capacity, speed, and durability makes it a preferred choice for manufacturers looking to integrate advanced memory solutions into their products.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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