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MT41K256M16TW-107:P

  • In Stock: 2000
  • Available: 10000
  • Updated: 18 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.92005US $2.92
10+US $1.94670US $19.47
30+US $1.46003US $43.80
100+US $1.16802US $116.80
500+US $1.07069US $535.34
1000+US $0.97335US $973.35

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Description

The MT41K256M16TW-107:P is a DRAM (Dynamic Random Access Memory) component manufactured by Micron Technology. It is a DDR3 (Double Data Rate 3) SDRAM (Synchronous Dynamic Random Access Memory) device, which is widely used in various electronic applications, including computers, servers, and other digital devices that require high-speed memory.

Key Features:

  1. Memory Configuration:

    • The MT41K256M16TW-107:P is organized as 256 Meg x 16 bits, which means it has a total capacity of 4 Gigabits (Gb) or 512 Megabytes (MB) of memory. This configuration allows for efficient data storage and retrieval.
  2. DDR3 Technology:

    • As a DDR3 memory chip, it supports higher data rates compared to its predecessor, DDR2. The "107" in the part number indicates that it operates at a speed of 1066 MT/s (megatransfers per second), which is suitable for a variety of applications requiring moderate to high bandwidth.
  3. Voltage and Power:

    • The device operates at a supply voltage of 1.5V, which is standard for DDR3 memory. This lower voltage helps reduce power consumption, making it more energy-efficient compared to older memory technologies.
  4. Package Type:

    • The MT41K256M16TW-107:P is typically available in a compact 78-ball TFBGA (Thin Fine Ball Grid Array) package. This package type is designed for high-density applications, allowing for a smaller footprint on the PCB (Printed Circuit Board).
  5. Latency and Performance:

    • The memory chip features a CAS latency (Column Address Strobe latency) of 7, which indicates the number of clock cycles it takes to access a specific column of data in memory. This latency is relatively low, contributing to the overall performance of the memory.
  6. Temperature Range:

    • The device is designed to operate within a specified temperature range, typically from -40°C to +85°C, making it suitable for both consumer and industrial applications.
  7. Applications:

    • The MT41K256M16TW-107:P is commonly used in various applications, including laptops, desktops, servers, networking equipment, and embedded systems. Its combination of capacity, speed, and power efficiency makes it a versatile choice for many memory-intensive tasks.

Summary:

The MT41K256M16TW-107:P from Micron Technology is a reliable and efficient DDR3 SDRAM memory chip that offers a balance of performance and power efficiency. With its 4 Gb capacity, 1066 MT/s speed, and low operating voltage, it is well-suited for a wide range of electronic applications, making it a popular choice among designers and engineers in the field of memory technology.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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