MT41K256M16TW-107:P
- Manufacturer's Part No.:MT41K256M16TW-107:P
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- Description:IC DRAM 4G PARALLEL 96FBGA
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- Quantity:Buy NowAdd to Cart
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- In Stock: 42340
- Available: 10000
- Updated: 1 Day 15 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.80908 | US $2.81 |
10+ | US $1.87272 | US $18.73 |
30+ | US $1.40454 | US $42.14 |
100+ | US $1.12363 | US $112.36 |
500+ | US $1.03000 | US $515.00 |
1000+ | US $0.93636 | US $936.36 |
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- Description
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The MT41K256M16TW-107:P is a DRAM (Dynamic Random Access Memory) component manufactured by Micron Technology. It is a DDR3 (Double Data Rate 3) SDRAM (Synchronous Dynamic Random Access Memory) device, which is widely used in various electronic applications, including computers, servers, and other digital devices that require high-speed memory.
Key Features:
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Memory Configuration:
- The MT41K256M16TW-107:P is organized as 256 Meg x 16 bits, which means it has a total capacity of 4 Gigabits (Gb) or 512 Megabytes (MB) of memory. This configuration allows for efficient data storage and retrieval.
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DDR3 Technology:
- As a DDR3 memory chip, it supports higher data rates compared to its predecessor, DDR2. The "107" in the part number indicates that it operates at a speed of 1066 MT/s (megatransfers per second), which is suitable for a variety of applications requiring moderate to high bandwidth.
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Voltage and Power:
- The device operates at a supply voltage of 1.5V, which is standard for DDR3 memory. This lower voltage helps reduce power consumption, making it more energy-efficient compared to older memory technologies.
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Package Type:
- The MT41K256M16TW-107:P is typically available in a compact 78-ball TFBGA (Thin Fine Ball Grid Array) package. This package type is designed for high-density applications, allowing for a smaller footprint on the PCB (Printed Circuit Board).
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Latency and Performance:
- The memory chip features a CAS latency (Column Address Strobe latency) of 7, which indicates the number of clock cycles it takes to access a specific column of data in memory. This latency is relatively low, contributing to the overall performance of the memory.
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Temperature Range:
- The device is designed to operate within a specified temperature range, typically from -40°C to +85°C, making it suitable for both consumer and industrial applications.
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Applications:
- The MT41K256M16TW-107:P is commonly used in various applications, including laptops, desktops, servers, networking equipment, and embedded systems. Its combination of capacity, speed, and power efficiency makes it a versatile choice for many memory-intensive tasks.
Summary:
The MT41K256M16TW-107:P from Micron Technology is a reliable and efficient DDR3 SDRAM memory chip that offers a balance of performance and power efficiency. With its 4 Gb capacity, 1066 MT/s speed, and low operating voltage, it is well-suited for a wide range of electronic applications, making it a popular choice among designers and engineers in the field of memory technology.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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